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| SMD Type Transistors IC Dual N & P-Channel Enhancement Mode Field Effect Transistor KDS9952A Features N-Channel 3.7A, 30V, RDS(ON)=0.08W @ VGS=10V. P-Channel -2.9A, -30V, RDS(ON)=0.13W @ VGS=-10V. High density cell design or extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual (N & P-Channel) MOSFET in surface mount package. Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous Drain Current Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) Operating and Storage Temperature Thermal Resistance Junction to Case (Note 1) TJ, TSTG R R JC JA Symbol VDSS VGS (Note 1a) ID PD N-Channel 30 20 3.7 15 2 1.6 P-Channel -30 20 2.9 10 Unit V V A A PD 1 0.9 -55 to 150 40 78 W /W /W Thermal Resistance Junction to Ambient (Note 1a) www.kexin.com.cn 1 SMD Type KDS9952A Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Symbol BVDSS Testconditons VGS = 0 V, ID = 250 VGS = 0 V, ID = -250 VDS = 24 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V,TJ = 55 VDS = -24 V, VGS = 0 V VDS = -24 V, VGS = 0 V,TJ = 55 Gate-Body Leakage, Forward Gate-Body Leakage, Reverse IGSSF IGSSR VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 VDS = VGS, ID = -250 VDS = VGS, ID = -250 VGS = 10 V, ID = 1.0 A VGS = 10 V, ID = 1.0 A,TJ = 125 VGS = 4.5 V, ID = 0.5 A Static Drain-Source On-Resistance RDS(on) VGS = 4.5 V, ID = 0.5 A,TJ = 125 VGS =-10 V, ID =-1.0 A VGS =-10 V, ID =-1.0 A,TJ = 125 VGS = -4.5 V, ID =- 0.5 A VGS = -4.5 V, ID =- 0.5 A,TJ = 125 On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time ID(on) gFS Ciss Coss Crss td(on) tr td(off) VGS = 10 V, VDS = 5 V VGS = -10 V, VDS = -5 V VDS = 15 V, ID = 3.7 A VDS = -15 V, ID = -2.9 A N-Channel VDS = 10 V, VGS = 0 V,f = 1.0 MHz P-Channel VDS = -10 V, VGS = 0 V,f = 1.0 MHz N-Channel VDD = 10 V, ID = 1 A VGS = 10 V, RGEN = 6 P-Channel VDD = -10 V, ID = -1 A VGS = -10 V, RGEN = 6 (Note 2) (Note 2) N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Total Gate Charge Gate-Source Charge Qg Qgs N-Channel VDS = 10 V, ID = 3.7 A,VGS = 10 V P-Channel VDS = -10 V, ID = -2.9 A,VGS = -10 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 15 -10 P-Ch N-Ch A A,TJ = 125 A A,TJ = 125 A A Type N-Ch P-Ch N-Ch P-Ch ALL ALL N-Ch P-Ch 1 0.7 -1 Min 30 -30 Transistors IC Typ Max Unit V 2 25 -2 -25 100 -100 1.7 1.2 -1.6 0.06 0.08 0.08 0.11 0.11 0.15 0.17 0.24 2.8 2.2 -2.8 -2.5 0.08 0.13 0.11 0.18 0.13 0.21 0.2 0.32 A 6 4 320 350 225 260 85 100 10 9 13 21 21 21 5 8 9.5 10 1.5 1.6 3.3 3.4 15 40 20 40 50 90 50 50 27 25 nC nC S pF pF pF ns ns ns V nA nA A -0.85 -1.25 Turn-Off Fall Time tf ns Gate-Drain Charge Qgd nC 2 www.kexin.com.cn SMD Type KDS9952A Electrical Characteristics Ta = 25 Parameter Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Symbol IS VSD trr VGS = 0 V, IS = 1.25 A (Note 2) VGS = 0 V, IS =-1.25 A (Note 2) VGS=0 V, IF=1.25 A,dIF/dt=100A/ VGS=0 V, IF=-1.25 A,dIF/dt=100A/ s s Testconditons Type N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min Transistors IC Typ Max 1.2 -1.2 Unit A V ns 0.8 -0.8 1.3 -1.3 75 100 www.kexin.com.cn 3 |
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